Recent progresses in R&D and production of GaN HEMT based power amplifiers

This report describes recent progresses in development and production of GaN HEMT based power amplifiers in Wavice Inc., such as discrete transistors, s-band internally matched packaged transistors, 5W 3.5 GHz Doherty amplifiers, S-band Tx module and 4kW C-band high power amplifiers. Especially for s-band internally matched transistors and power amplifiers, more than 1500 products have been produced and qualified. The RF performance variations and reliability data from the qualification of power amplifiers are summarized.