Study on temperature distribution of IGBT module

Insulated gate bipolar transistor (IGBT) operates at high current, high power and repeated shock current conditions. Joule heating induced during high current conditions, subsequently raising the temperature of the IGBT module. In this paper, we carried out the DC power cycling test with the 200 A current condition. The temperature distribution and the temperature change process of the whole IGBT module are recorded by using a high-speed infrared detecting camera. The finite element model of IGBT module is established by using finite element analysis software ABAQUS. By simulating DC power cycling test, the temperature distribution of IGBT module under different current loads is analyzed, the temperature change process of the whole IGBT module is studied, and the maximum temperature location of the IGBT module is determined. Comparing with the experimental data obtained under the same conditions, the simulation results are in good agreement with the experimental data, which verifies the finite element model.