Dynamic finite element modeling of backside grinding process for TSV wafer

Through Silicon via (TSV) technology makes the stacked chip to achieve the shortest distance of interconnection in vertical direction (z direction). However, there are many challenges for TSV wafer processes. One of the challenges is TSV wafer backside grinding process. In this paper, a predictive model was introduced to calculate the normal grinding force, and a dynamic finite element modeling methodology was established, and used to study the TSV wafer stress. Effects of TSV wafer thickness, grinding wheel rotation speed, and grinding wheel feed rate on the stress distribution were investigated.