Rise-Time Improvement in Bipolar Pulse Solid-State Marx Modulators

This paper presents the effect of stray capacitances in bipolar (negative and/or positive) pulses generated by the two different topologies of the solid-state Marx modulators. According to the analysis, the stray capacitances influence the energy transfer from the Marx modulator capacitors to the load affecting the bipolar (negative and/or positive) pulse rise time. This paper deals with the structure design to reduce the influence of the stray capacitance and to improve the pulse rise time of these bipolar solid-state Marx modulators. A four-stage laboratory prototype of the two topologies has been assembled using 1200-V insulated gate bipolar transistors and diodes, operating with 1000-V dc input voltage and 1-kHz frequency, producing 4-kV bipolar pulses, with 5-μs pulse duration and 120-ns rise time, into a resistive load.