GaN HEMT DC $I$ – $V$ Device Model for Accurate RF Rectifier Simulation

Recently, various high-efficiency RF rectifiers have been proposed. In this letter, to improve the simulation accuracy of RF active rectifier circuits, a new device model for GaN HEMTs is proposed that improves the reproducibility of ID-VDS characteristics in the third-quadrant region (both drain voltage and drain current are negative). Based on measured characteristic data of an actual GaN HEMT, the device parameters for this model have been decided, and the advantage of the new device model has been confirmed.