A Si-Compatible Fabrication Process for Scaled Self-Aligned InGaAs FinFETs

We have developed a scalable gate-last process to fabricate self-aligned InGaAs FinFETs that relies on extensive use of dry etch. The process involves F-based dry etching of refractory metal ohmic contacts that are formed early in the process. The fins are etched in a novel inductive coupled plasma process using BCl
₃
/SiCl
₄
/Ar. High aspect ratio fins with smooth sidewalls are obtained. To further improve the quality of the sidewalls and shrink the fin width, digital etch is used. Through this process flow, we have demonstrated FinFETs with L
_g=20
nm and fin width as narrow as 7 nm with high yield. Good electrostatic characteristics are obtained in a wide range of device dimensions. In devices with 7 nm fin width, record channel aspect ratio, and transconductance per unit footprint are obtained.