6-mW Single-Mode High-Speed 1550-nm Wafer-Fused VCSELs for DWDM Application

This paper presents data on wafer-fused 1550-nm vertical-cavity surface-emitting lasers (VCSELs) based on the active region and distributed Bragg reflectors (DBRs) grown by molecular beam epitaxy. VCSELs with a tunnel junction aperture diameter of
$8~\mu \text{m}$
show lasing at a threshold current density
$j_{\mathrm {th}}<3$
kA/cm
²
, an output optical power of ~4 mW, and a −3 dB bandwidth of approximately 7 GHz at a 10-mA bias current. The devices demonstrate single-mode continuous wave operation with the transverse side-mode suppression ratio (SMSR) varying in the range of 40–45 dB up to roll-over currents. The increase in mirror losses due to the etching of the top DBR makes the output optical power increase to 6 mW and causes the wall-plug efficiency value to reach 20%, but SMSR remains in the range of 40–45 dB. This also makes it possible to reduce both the photon lifetime and, as a result, the effect of damping and increase the modulation bandwidth to 9 GHz. The observed open and clear eye diagrams indicate that non-return-to-zero operation is possible at bit rates of up to 30 Gbps without equalization or forward error correction. The high-output optical power and modulation performance pave the way for the dense wavelength division multiplexing application of wafer-fused 1550-nm VCSELs.