Improving MOCVD MoS2 Electrical Performance: Impact of Minimized Water and Air Exposure Conditions

The effects of oxidants both in the channel and contact regions of MoS
₂
transistors are discussed through a systematic experimental study. This letter highlights the issues of partial instability in metal-organic chemical vapor deposition MoS
₂
and proposes a procedure, which considerably improves the electrical characteristics of back-gated transistors. By avoiding ambient exposure and layer oxidation, contact resistance can be reduced and intrinsic mobility increased by 50%.