High power and gain at 35 GHz utilizing an InAlGaAs-In/sub 0.32/Ga/sub 0.68/As metamorphic HEMT

Low on-state breakdown voltage has limited the metamorphic HEMT's power by restricting drain voltages to less than or equal to 3.5 V. We have overcome this limitation and demonstrated high breakdown voltage metamorphic HEMTs (32% In channel) which allow operation at V/sub ds/=6 V, resulting in a power density of 650 mW/mm at 35 GHz.