InP/InGaAs heterojunction bipolar transistor circuits for high bit-rate ETDM transmission systems

Several ICs based on InP/InGaAs DHBT technology and suitable for future 40 Gb/s ETDM optical transmission systems are presented. More than 25 Gb/s operation has been obtained with an MS-DFF circuit, latched and double-latched multiplexer. A 28 GHz static frequency divider and a 46 Gb/s MUX are reported. Finally, a MUX-driver able to supply 2 Vpp at 40 Gb/s is presented. The experimental results obtained, in the state of the art, demonstrate the strong potential of the InP-based HBT technology.