Comprehensive hydrodynamic simulation of an industrial SiGe heterobipolar transistor

Based on SIMS and CV profile measurements and transport parameters derived from Monte Carlo simulations, the generalized hydrodynamic model agrees very well with experimental data for collector current, ideality factor, Early voltage, open-base collector/emitter breakdown voltage, and cutoff frequency. To the authors' best knowledge this is the first time that such a comprehensive verification could be demonstrated for an industrial SiGe HBT and a hydrodynamic model.