Driving the Adoption of High Voltage Gallium Nitride Field-Effect Transistors [Expert View]

Expert View High-voltage (HV) gallium nitride field-effect transistors (FETs) are becoming the next standard for power conversion. They provide cost competitive, easy-to-embed solutions that reduce energy loss by more than 50%, shrink system size by more than 40%, and simplify power converter/inverter design and manufacturing.