Photonic Crystal Lasers Fabricated by MOVPE Based on Organic Arsenic Source

We demonstrate the characteristics of photonic crystal lasers fabricated by air hole retained regrowth using metal-organic vapor-phase epitaxy based on an organic arsenic source [tertiary-butyl arsine (TBAs)]. TBAs has the advantage of high decomposition efficiency compared with AsH
₃
, which enables us to achieve a unique air hole shape under the crystal regrowth. We demonstrate that photonic crystal lasers with an area of 200 × 200 μm
²
exhibit single-mode lasing with a low lasing threshold of ~0.5 kAcm
^-2
. The effect of the unique shape of the air holes obtained by the TBAs-based regrowth on the laser performance is discussed using coupled-wave theory.