1- $\mu \text{m}$ Short-Channel Oxide Thin-Film Transistors With Triangular Gate Spacer

In this letter, high-performance back-channel etch type oxide thin-film transistors (TFTs) with very narrow channel length, 1 μm, are presented. To cover the steep slope at the dry-etched gate pattern edge with a thin gate insulator, a triangular-shaped gate spacer was introduced. A 1-μm short-channel oxide TFT is particularly adaptable to next-generation display applications requiring very high resolution. The field-effect mobility (μFE), subthreshold slope, turn-on voltage (V
_on
), and the on/off ratio were 55.2 cm
²
/Vs, 0.11 V/decade, 0.13 V, and 6.8 × 10
⁹
, respectively.