A Thin-Film, a-IGZO, 128b SRAM and LPROM Matrix With Integrated Periphery on Flexible Foil

A fast, 128-b implementation of both SRAM and LPROM with integrated periphery in a thin-film amorphous indium-gallium-zinc oxide technology is reported. The SRAM block can be read in 265 μs/byte and written in 110 μs/byte, consumes 12.3 mW, and has an area of 11.9 mm
²
. Furthermore, after power down, an SRAM memory state retention time of 83 s is shown. The LPROM can be read in 40 μs/b, consumes 4.50 mW, and has an area of 3.75 mm
²
. The SRAM enables fast volatile RAM memory for thin-film microprocessors, while the LPROM can be used to store the identification code for state-of-the-art thin-film RFID tags.