Comparison between patterned and unpatterned electrodeposited spin-valve sensors

Electrodeposited spin-valves on GaAs substrates were patterned down into 80 /spl mu/m, 4 /spl mu/m and 2 /spl mu/m strips. A symmetric spin-valve configuration is used which incorporates an artificially hard substructure. Sensitivities up to 1.5%/Oe were observed, these being the highest ever observed in electrodeposited structures. Upon patterning an increased antiferromagnetic contribution of the inner hard substructure was seen.