High-Performance Mid-Wavelength InAs/GaSb Superlattice Infrared Detectors Grown by Production-Scale Metalorganic Chemical Vapor Deposition

We demonstrate high-performance mid-wavelength p-i-n infrared detectors based on InAs/GaSb type-II superlattices (SLs) grown by a production-scale metalorganic chemical vapor deposition system. Through a specially-designed gas switching sequence and the use of GaAs-type of interfacial layers, strain-balanced SLs with excellent material quality were obtained, as evidenced by atomic force microscopy, photoluminescence, X-ray diffraction, and transmission electron microscopy. The processed devices, with a cutoff wavelength around 4.8 μm, exhibited a R
₀
A of 2.3×10
⁴
Ωcm
²
and a peak responsivity of 1.4 A/W at 77 K. A specific detectivity of 7.2×10
¹²
cmHz1/2/W was achieved at 3.7 μm. These values are comparable with those reported for InAs/GaSb SL detectors with similar cutoff wavelengths grown by molecular beam epitaxy.