Abstract:
A single-channel 10b pipelined SAR ADC with a gm-cell residue amplifier and a current-mode fine SAR ADC achieves a 500MS/s conversion rate in a 28nm CMOS process under a ...Show MoreMetadata
Abstract:
A single-channel 10b pipelined SAR ADC with a gm-cell residue amplifier and a current-mode fine SAR ADC achieves a 500MS/s conversion rate in a 28nm CMOS process under a 1.0 V supply. With background offset and gain calibration, the prototype ADC achieves an SNDR of 56.6dB at Nyquist. With power consumption of 6mW, it obtains a FoM of 21.7fJ/conversion-step.
Published in: 2017 Symposium on VLSI Circuits
Date of Conference: 05-08 June 2017
Date Added to IEEE Xplore: 14 August 2017
ISBN Information: