Structural and ferromagnetic resonance study of sputtered FeCoB-based soft magnetic multilayers

In view of their large saturation magnetization (e.g. ~0.8-2 T) and low hysteresis loss, soft magnetic layers based on nanocrystalline and amorphous alloys integrated with silicon complementary metal-oxide-semiconductor (Si CMOS) technology, e.g. NiFe, FeCoB and CoTaZr, currently receive great attention for their potential for GHz frequencies applications, such as on-chip power management for multi-core processors, RF circuits for mobile devices, and low power magnetic sensors.