Effect of trichloroethene (TCE) on deposition rate and film quality of low-temperature SiO2 films grown using silicone oil and ozone gas

Si oxide films were deposited at low temperature of 200 °C using the chemical reaction between silicone oil vapor and ozone gas at atmospheric pressure. In order to investigate the effect of adding an organic solution of trichloroethene (TCE) to the reactant gases, we used two kinds of TCE direction flow to the sample, i.e., (a) direct and (b) indirect flows. As a result, we found that adding TCE increases the deposition rate, and reduces the -OH content in the deposited film.