Activation behavior of polycrystalline silicon films by phosphorus ion implantation at 200°C

Carrier generation in a low processing temperature was investigated in phosphorus ion implantation under in-situ sample heating. Phosphorus ions with 1×10
¹⁵
cm
^-2
were implanted at 10 keV to 33-nm-thick polycrystalline silicon (poly-Si) films formed on glass substrates heated at 200°C. While the crystalline volume ratio X of the initial poly-Si films was 0.8, the phosphorus implantation at 200°C maintained X as 0.15 at the top-8-nm-surface region and 0.4 at the bottom surface. A high electrical conductivity of 78 S/cm was obtained because of carrier generation during ion implantation.