High reliability a-InGaZnO TFT by inductively coupled plasma sputtering system

This report shows that the reliability of amorphous InGaZnO (a-IGZO) thin-film transistors (TFT) are improved when a-IGZO is deposited using an inductively coupled plasma (ICP) sputtering system. Here the ICP sputtering system that we developed proved effective for improving the reliability of a-IGZO TFTs. The results of negative gate bias stress test (NBS) showed threshold voltage shift (ΔVth) decreased when using ICP sputtering deposited a-IGZO and The reliability improved over previous system. Furthermore, when layered structure a-IGZO was used, ΔVth was greatly decreased. The results suggest an improvement in the state of metal-oxygen bonding state.