Morphological investigation of indium and gallium co-doped ZnO films, derived by sol-gel method

Ga-and In co-doped ZnO films have been successfully obtained by sol-gel approach. XRD analysis shows that Zn-In-Ga oxide films possess lower crystallinity compared with the undoped ZnO and ZnO:In films. The corresponding XRD lines are broader and less intense. FTIR detailed study of Zn-In-Ga oxides and ZnO shows that Ga and In codoping affects the shapes and the intensity of the absorption bands with no traces of Ga-O and In-O bonds. Optical study shows that the Zn-In-Ga oxide films have improved transparency compared to ZnO and ZnO:In films. The optical band gaps are estimated and discussed.