Minimizing discontinuities in wafer-level sub-THz measurements up to 750 GHz for device modelling applications

Achieving accurate and continuous measurement for sub-THz wafer-level device characterization is particularly important for device modelling applications. This paper outlines, for the first time, challenges affecting measurement continuity and accuracy at such high frequencies. The newly proposed sub-THz measurement strategy with pre-calibration check for low probe contact resistance, combining power and S-parameter probe tip calibration, implementing post-calibration verification checks and ensuring consistent and accurate DC biasing of devices across all frequency bands, has been demonstrated in this work to improve measurement continuity and quality of wafer-level measurements up to 750 GHz.