Power loss and junction temperature analysis of power semiconductor devices

A new developed electro-thermal calculation method is implemented to estimate the power loss and working temperature of IGBT devices. Based on the measurement of IGBT characteristics, the exact estimation of power loss considering the junction temperature is introduced. Then the thermal network is used to calculate the working temperature. The comparison between experiment and calculation results shows that this method is effective as a designing step with only the time domain voltage and current data obtained from simulation results.