Modeling and analysis of depletion-mode NMOS transistor as transmitter/receiver RF switch

This paper investigates the concept of using depletion-mode n-channel MOSFET (D-MOS) as RF transmitter/receiver switch. A new TCAD modeling methodology to analyze large-signal GHz-range T/R operation of MOS transistors is developed. The D-MOS offers a significant reduction in RON and COFF over the widely used enhancement-mode MOSFET (E-MOS). An excellent figure of merit (R
_ON
×C
_OFF
) of 134 fs can be achieved(roughly 3X improvement over E-MOS).