Effect of electron beam irradiation on black phosphorus field effect transistor performance

Black phosphorous (BP), due to its superior carrier transport properties which promise various transistor applications, has seen significant research interest in recent years. An inherent direct and appreciable band gap along with high mobility values makes it very attractive for optoelectronics and flexible devices. However, interaction between BP and electron beam has not been investigated experimentally. Electron beam is known to induce defects and structural changes in 2D materials, which can deteriorate device quality [5, 4]. Study of the effect of e-beam irradiation on BP devices is extremely important because of its pervasiveness in various imaging techniques such as transmission electron microscopy (TEM) and scanning electron microscopy (SEM), and fabrication techniques like e-beam lithography (EBL).