Wide-bandgap Gallium Nitride p-channel MISFETs with enhanced performance at high temperature

Wide-bandgap materials, particularly Gallium Nitride, have emerged as the platform underlying many of the most promising technologies in the high-power and high-frequency domain. However, GaN p-channel devices lag far behind their popular n-channel counterparts, due to lower mobilities as well as difficulties in doping and forming ohmic contacts. There is a strong need for wide-bandgap p-channel FETs — this missing piece would enable energy-efficient, high-voltage CMOS electronics, a critical technique for on-chip power conditioning and management.