Acoustoelectric amplification of surface acoustic waves on ZnO deposited on AlGaN/GaN Epi

We believe that our results indicate the electroacoustic gain is taking place in the ZnO/AlGaN/GaN structure with a larger gains then previously achieved. The incorporation of a separate piezoelectric adds significant flexibility in design that can lead to higher performance. With further investigation and optimization of the process and design, we project that this structure can lead the way to seamlessly integrate low loss SAW devices on III-V technology.