First demonstration of band-to-band tunneling in black phosphorus

Black phosphorus (BP) has recently attracted wide interest for various applications and is particularly appealing for low power tunneling devices due to several unique properties such as a small bandgap and small carrier effective masses. Here, we report the first experimental demonstration of band-to-band tunneling (BTBT) in BP. In addition, we also report fully top gated BP FETs with record-high n-type current drive capabilities.