Photoelectric Response in Indium-Tin Oxide Films

In this paper, the mechanism of photoelectric response of indium tin oxide films is discussed. We observed the photoelectric emission in indium tin oxide films and suggested the physical mechanism describing the photoelectric response based on this phenomenon. We showed that the anisotropy of the electric field could be associated with preferred orientation of the grains in deposited films. We discussed the influence of parasitic capacitance on the shape of the photoelectric response. In this paper, we showed that photoelectric effect in indium-tin oxide films could be applied to measure the temporal characteristics of the laser pulse.