A closed-form DC model for amorphous oxide semiconductor TFTs considering both non-degenerate and degenerate conduction

A closed-form drain current model for amorphous oxide semiconductor thin-film transistors is proposed in this paper. By adopting the effective charge density method and reformulating Lambert W function as two different exponential terms in different regions, both non-degenerate and degenerate conduction regimes are taken into account. Furthermore, an I-V model considering both the trapped and free charges is developed. The proposed model is verified by numerical simulation and experimental results. It is explicit and CAD-oriented, which is a valuable tool for circuit design.