Optimization and analysis of high reliability 30–50V dual RESURF LDMOS

This paper describes an optimized dual RESERUF LDMOs with enhanced reliability for 30-50V automotive applications. The proposed LDMOS is designed to suppress drain current expansion due to Kirk effect. Simulation verified that the avalanche breakdown voltage is scalable from 32 to 60V, with the breakdown location always in the bulk, ensuring good ESD performance. Low specific on-resistance of 44.8mΩmm2 at breakdown voltage of 60.7V is also obtained. Furthermore, the LDMOS indicates superior low power dissipation in the practical switching frequency range of DC-DC converters.