On the progressive performance of a 700-V triple RESURF LDMOS based on substrate termination technology

In this paper, a novel triple reduced surface field (RESURF) LDMOS with N-top layer based on substrate termination technology (STT) is proposed. The analytical models of surface potential, surface electric field, breakdown voltage (BV) and optimal integrated charge of N-top layer (Qntop) for the novel triple RESURF LDMOS are achieved. Furthermore, STT is applied to avoid the premature avalanche breakdown occurring in the curved source region with small curvature radius for the interdigitated layout. Two key parameters of L and LP are optimized. With optimization for the termination region, the LDMOS demonstrates a progressive performance with lowest specific on-resistance (Ron,sp) for the 700-V LDMOS in comparison to the other latest existing technologies.