Study on electron mobility model for AlN/GaN MIS-HEMTs with embedded source field-plate structures

Electron mobility has been characterized for drain current simulations of AlN/GaN MIS-HEMTs. We especially focus on the embedded source field-plate structures (ESFP) for high power applications. To apply the models to simulate power switching applications including DC-DC converters, electron mobility equations are the key to characterize DC bias conditions under dynamic operations. The model is implemented in MIT Virtual Source model with modifications of Verilog-A source codes. The model parameters are extracted from measured data of the transistor test structures that we fabricated with an ESFP technology. The results show excellent agreements between measurements and simulations.