Modeling and simulation of TSV induced keep-out zone using silicon data

Through-silicon via (TSV) induced stress field and device performance variation are investigated using N28 silicon data. Back-end-of-line (BEOL) dielectrics affects the stress field of via-last TSV. Asymmetric keep-out zone (KOZ) is observed, i.e. the absolute value of radial stress (|σr|) is different from that of tangential stress (|σθ|). The physics behind the asymmetry is described. A KOZ model considering the asymmetric stress field is proposed and verified by experiment data.