Resistive-gate field-effect transistor exhibiting steep subthreshold slope of 5mV/dec and high ION/IOFF ratio

In this paper, a new steep-slope device concept of resistive-gate field-effect transistor (RG-FET), which is operated by electrically induced abrupt resistance change of gate stacks, is discussed in detail and experimentally optimized. The fabricated RG-FET demonstrates both an ultra-steep subthreshold slope of below 5mV/dec over almost 2 decades of drain current and a high on-current competitive with conventional MOSFET. The leakage current of RG-FET is also largely reduced for almost 4 decades by MOSFET component optimization, leading to a high ION/IOFF ratio of 106, which shows that RG-FET is a promising candidate for future low-power electrics applications.