Ferroelectric, small bandgap and wide bandgap materials for ultra-low power green electronic devices

The power consumption in electronic devices is the major challenge as increasing the demand of IC chips. To lower the VDD and AC power (PAC), both high mobility material and steep turn-on device technology are useful. The ferroelectric high-κ HfZrO MOSFET can realize not only a small sub-threshold slope (SS) <60 mV/dec for low VDD and PAC, but also a smaller aspect ratio FinFET. The small bandgap (EG) Ge pMOSFET can lower the PAC by 4 times due to its 2× higher field-effective mobility at half effective field. The high-mobility wide EG GaN MOSFET is a candidate to lower the direct tunneling leakage current and DC power (PDC) by orders of magnitude in future deep X-nm device. The ferroelectric high-κ HfZrO MOSFET can also perform DRAM function with lower PDC than existing DRAM.