A SPICE model of bi-layer resistive random access memory with stepped reset phenomenon

In this paper a SPICE model of bi-layer and bipolar metal oxide resistive random access memory (RRAM) is proposed. Stepped reset phenomenon in bipolar RRAM is included and the impact of buffer layer thickness on I
_reset
is reproduced. The model is verified by experimental results from AlO
_x
/WO
_x
based RRAM [1,2]. This model is useful for multi bits storage circuit design, read reference circuit design and other RRAM circuit.