A Dynamic Carrier-Storage trench-gate IGBT with low switching loss

A novel Dynamic Carrier-Storage IGBT (DCS-IGBT) is proposed. With Gate (hereinafter, G) and Control Gate (hereinafter, CG), two independent gates integrated in one trench area, CG can be applied with different bias to modulate the carrier-storage layer dynamically. When the device is on, positive bias on CG can raise the concentration of the carrier storage layer leading an increase of the current. When the device is turning off, negative bias on CG can reduce hole carrier concentration in the drift region so as to decrease the switching energy. Therefore, a dynamic carrier storage layer is created and better trade-off between the saturation voltage and switching loss is achieved.