The effect of proton irradiation on the characteristics of InP/InGaAs heterojunction

In this article, the effect of proton irradiation on the DC characteristic of InP/InGaAs heterojunction is studied with varying fluences and proton energies. The current-voltage (I-V) before and after proton irradiation are compared. The result indicates that higher device current is caused by lower energy proton irradiation and the increase of fluences for the proton energy less than 3MeV. The density of interface states increases with the increase of fluences and the more interface states are induced by 3MeV proton irradiation, comparing with 10 MeV proton irradiation, and the simulated result from SRIM is a consistent with the measurement.