Characterization of trap behaviors in AlGaN/GaN MIS-HEMT via transient capacitance measurement

Transient capacitance measurement is used to study the trap behaviors in AlGaN/GaN MIS-HEMTs: 1) By measuring transfer characteristics before and after the pulse cycles applied on the gate electrode in AlGaN/GaN MIS-HEMTs, the threshold voltage (V_th) instability induced by the gate pulse is investigated; 2) The change of trap density before and after step-stress applied on drain electrode is also quantitatively analyzed.