0.3 VT/1.1 kV AlGaN/GaN lateral power diode with MIS-gated hybrid anode on silicon substrate

In this work, a high performance AlGaN/GaN power diode featuring MIS-gated hybrid anode (MG-HAD) with ultralow forward turn-on voltage (V
_T
) and low reverse leakage current was experimentally demonstrated. By accurately designing the recessing depth in the MIS-gate region, a record low V
_T
of 0.2 V for GaN power diode was obtained in the MG-HAD with 4-nm recessed-barrier-thickness. Meanwhile, the device consistently exhibits a respectable low reverse leakage current less than 1 μA/mm up to 1100 V owing to the Al
_0.05
Ga
_0.95
N back barrier used in the as-grown heterostructure. More importantly, the lateral MG-HAD is compatible with the normally-off AlGaN/GaN HEMTs indicating its great potential for all GaN smart power ICs.