Si-based horizontal InAs nanowire transistors

An original approach is applied to obtain horizontal InAs nanowires with high density and uniform direction on the patterned silicon-on-insulator substrate via metal organic chemical vapor deposition. Moreover, novel Si-based horizontal InAs nanowire transistors are realized initially. Both all-gate-around structure and InAs bulk channels can boost the transistors to achieve better gate-controlled capability and higher I
_ON
/I
_OFF
ratio more than 10
⁵
. More importantly, horizontal nanowire structure nowadays is more adoptable rather than the previous vertical one due to the compatibility with current planar CMOS process.