Characterization of HfO2/Al2O3 gate dielectric nanometer-stacks grown by atomic layer deposition on InAlAs substrates

We report the characteristics of HfO
₂
/Al
₂
O
₃
gate dielectric nanometer-stacks deposited on InAlAs at 245 °C by atomic layer deposition. The annealing effect on the interface and electrical properties of stack films was investigated by X-ray photoelectron spectroscopy, and electrical measurements. It is demonstrated that the resultant of As
₂
O
₃
during annealing is suppressed by Al
₂
O
₃
layer. The annealed samples exhibit better electrical properties with hysteresis reduced, capacitance value elevated.