Field-plate design optimization for high-power GaN high electron mobility transistors

An effect of adopting field plate (FP) technique in Gallium Nitride (GaN) high electron mobility transistor (HEMT) design is shown. The results of two-dimensional physical simulation of GaN HEMT with various FP design, taking into consideration the polarization effects, are represented. Results showed that optimized FP design allows to considerably decrease an electric field peak between gate and drain electrodes. The influence of field plate design on peak values of the electric field is demonstrated.