Technology evening panel discussion transistor future; How does it evolve after FinFET Era? Tuesday, June 6, 20:00–21:30

The FINFET has become widely used for nodes below 16nm. Its introduction in the manufacturing world has extended scalability of transistor dimensions. Beyond 5nm it is uncertain if the benefits of a FINFET structure will be maintained or lost. Alternative MOSFET structures may emerge to secure scaling. Nanosheet or nanowire have the potential to suppress short channel effect but these devices have an issue in enhancing on-state current without stacking multiple nanosheets or nanowires. Another approach is scaling channel thickness toward atomic scale. 2D materials like transition metal di-chalcogenide, black phosphorus are extensively studied. Synthesized 2D materials with single crystal structure has not been realized, and electrical characteristic are still poor compared with latest Si channel FET.