The first GeSn FinFET on a novel GeSnOI substrate achieving lowest S of 79 mV/decade and record high Gm, int of 807 μS/μm for GeSn P-FETs

The world's first GeSn p-FinFETs formed on a novel GeSn-on-insulator (GeSnOI) substrate is reported, with channel lengths L
_ch
down to 50 nm and fin width W
_Fin
down to 20 nm. In comparison with other reported GeSn p-FETs, record low S of 79 mV/decade, record high G
_{m, int}
, of 807 μS/um (VDs of -0.5 V), and the highest G
_{m, int}
/S
_sat
, were achieved. The highest high-field hole mobility of 208 cm2/Vs (at inversion carrier density of 8×10
^-2
cm
^-2
) for GeSn p-FETs with CVD grown GeSn channel was also obtained.