Strained germanium gate-all-around PMOS device demonstration using selective wire release etch prior to replacement metal gate deposition

Strained Ge p-channel Gate-All-Around (GAA) FETs are demonstrated on 300mm SiGe Strain Relaxed Buffer (SRB) and 45nm Fin pitch with the shortest gate lengths (L
_g
=40nm) and smallest Ge nanowire (NW) diameter (d=9nm) reported to date. Optimization of groundplane doping (GP) is required to minimize the impact of the parasitic channel in the SRB. The strained Ge GAA devices maintain excellent electrostatic control at the shortest gate lengths studied (L
_g
=40nm) with DIBL of 30mV/V and sub-threshold slope (SS
_SAT
) of 79mV/dec. This work shows a significant improvement not only compared to our previous work on strained Ge finFETs but also when benchmarked to published Ge GAA devices.