A nonvolatile SRAM integrated with ferroelectric HfO2 capacitor for normally-off and ultralow power IoT application

We have designed and fabricated a nonvolatile SRAM (NVSRAM) integrated with ferroelectric HfO
₂
capacitor, and experimentally demonstrated its nonvolatile functionality, for the first time. Sub-10nm-thick ferroelectric HfO
₂
capacitor shows excellent ferroelectricity and memory characteristics at low supply voltage. The NVSRAM with ferroelectric HfO
₂
capacitor is capable of storing and recalling previous memory state before power shutdown, which is suitable for the intermittent operation of IoT devices with deep-sleep mode. The NVSRAM with ferroelectric HfO
₂
capacitor can be a cost-effective, normally-off and ultralow power embedded memory solution.